Solar cells having a transparent composition-graded buffer layer

ABSTRACT

A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of co-pending patentapplication Ser. No. 10/868,080 filed Jun. 15, 2004, entitled “SOLARCELLS HAVING A TRANSPARENT COMPOSITION-GRADED BUFFER LAYER,” now allowedand incorporated herein by reference in its entirety.

This invention was made with Government support under Contract No.F29601-98-2-0207 awarded by the United States Air Force. The Governmenthas certain rights in this invention.

The present invention generally relates to semiconductor materials and,more specifically, to solar cells.

BACKGROUND OF THE INVENTION

A solar cell is a photovoltaic (PV) device having one or morephotovoltaic junctions. Each junction is formed by a photovoltaicsemiconductor layer. At each junction, incident light energy, andspecifically solar energy, is converted to electrical energy through thephotovoltaic effect.

The interest in solar cells has been increasing due to concernsregarding pollution and limited available resources. This interest hasbeen for both terrestrial and non-terrestrial applications. In spaceapplications, the use of nuclear or battery power greatly increases aspacecraft's payload for a given amount of required power to operate thesatellite. Increasing the payload of a spacecraft in this mannerincreases the cost of a launch more than linearly. With the readyavailability of solar energy in space for a spacecraft such as asatellite, the conversion of solar energy into electrical energy may bea good alternative to an increased payload.

The cost per watt of electrical power generation capacity ofphotovoltaic systems inhibits their widespread use in terrestrialapplications. The conversion efficiency of sunlight to electricity maybe critically important for terrestrial PV systems, since increasedefficiency usually results in a reduction of related electricitygeneration system components (such as cell area, module or collectorarea, support structures, and land area) for a required power output ofthe system. For example, in concentrator solar cell systems whichconcentrate sunlight from around 2 to around 2000 times onto the solarcell, an increase in efficiency typically results in a proportionatereduction of an area comprising expensive concentrating optics.

To increase the electrical power output of such cells, multiple subcellsor layers having different energy bandgaps have been stacked so thateach subcell or layer can absorb a different part of the wide energydistribution in the sunlight. This arrangement is advantageous, sinceeach photon absorbed in a subcell corresponds to one unit of charge thatis collected at the subcell operating voltage, which is approximatelylinearly dependent upon the band gap of the semiconductor material ofthe subcell. Since the output power is the product of voltage andcurrent, an ideally efficient solar cell would have a large number ofsubcells, each absorbing only photons of energy negligibly greater thanits band gap.

The most efficient and therefore dominant multijunction (MJ) PV celltechnology is the GaInP/Ga(In)As/Ge cell structure. Here the use ofparentheses in the Ga(In)As middle subcell material indicates that theincorporation of indium in the middle cell is optional, so that thecomposition of the middle cell may be either GaAs or GaInAs. Thesemonolithic cells may be grown lattice-matched to GaAs or Ge, and mayhave only the top two junctions active with an inactive Ge substrate(2-junction or 2J cells), or all three junctions may be active(3-junction or 3J cells). While variations on this material system, suchas AlGaInP or lattice-mismatched GaInP top cells, might provide a moreideal match of band gaps to the solar spectrum, practical considerationshave indicated that lattice-matched GaInP is preferred for large-scaleproduction.

In monolithic, series-interconnected, 2-junction and 3-junctionGaInP/Ga(In)As/Ge solar cells, it is desirable for the GaInP top subcellto have nearly the same photogenerated current density as the Ga(In)Assubcell. If the currents are different, the subcell with the lowestphotogenerated current will limit the current through all of theseries-interconnected subcells in the multijunction (MJ) cell, andexcess photogenerated current in other subcells is wasted. Limiting thecurrent in this manner results in a severe penalty on the MJ cellefficiency.

At the lattice constant of Ge (or of GaAs) substrates, GaInP grown underconventional conditions has an ordered group-III sublattice andtherefore has a band gap which is too low to achieve the desired currentmatch between subcells in the unconcentrated or concentrated AMO spacesolar spectrum, the unconcentrated or concentrated AM1.5D and AM1.5Gterrestrial solar spectra, and other solar spectra, unless the topsubcell is purposely made optically thin, as in U.S. Pat. No. 5,223,043.

Whether in the multiple junction or single junction PV device, aconventional characteristic of PV cells has been the use of a windowlayer on an emitter layer disposed on the base of the PV cell. Theprimary function of the window layer is to reduce minority-carrierrecombination (i.e., to passivate) the front surface of the emitter.Additionally, the optical properties of the window material must be suchthat as much light as possible is transmitted to lower cell layers wherethe photogenerated charge carriers can be collected more efficiently, orif there is substantial light absorption in the window, theminority-carrier lifetime in the window must be sufficiently long forthe carriers to be collected efficiently at the p-n junction between theemitter and base of the PV cell. Similarly, a back-surface field (BSF)structure below the PV cell base has been used to reduceminority-carrier recombination at the back surface of the base. As forthe window, the BSF structure (referred to here simply as a BSF, forbrevity) must have optical properties which allow most of the light thatcan be used by the subcells beneath the BSF to be transmitted by theBSF, and/or the minority-carrier properties in the BSF must be such thatelectrons and holes which are generated by light absorption in the BSFare efficiently collected at the p-n junction of the PV cell.

For the multiple-subcell PV device, the efficiency may be limited by therequirement of low-resistance interfaces between the individual cells toenable the generated current to flow from one cell to the next.Accordingly, in a monolithic structure, tunnel junctions have been usedto minimize the blockage of current flow. In addition to providing thelowest resistance path possible between adjacent subcells, the tunneljunction should also be transparent to wavelengths of light that can beused by lower subcells in the MJ stack, because of the poor collectionefficiency of carriers photogenerated in the tunnel junction region.

These properties are all dependent on the bandgap, doping levels,optical properties, and minority-carrier recombination and diffusionproperties of the base, emitter, window, BSF, and tunnel junction layersemployed in the device. The semiconductor properties of these celllayers may be enhanced or degraded for a MJ PV device by the choice ofsubstrate orientation.

There exists a need for multijunction solar (photovoltaic) cells withimproved power output, efficiency, performance, and cost effectiveness.

SUMMARY OF THE INVENTION

One potential approach to improving the existing triple junctionGaInP/Ga(In)As/Ge multijunction solar cell device is to add one or moreadditional junctions. In an specific case, a junction with anactive-layer band gap of approximately 1.0 eV is inserted between theGa(In)As and Ge active subcells. See U.S. Pat. Nos. 5,689,123;6,281,426; 6,100,546; 6,130,147; and 6,324,405, all of which areincorporated by reference. The layered combination GaInP/Ga(In)As/1.0 eVsubcell/Ge is an example of a four junction or 4J device. The 1.0 eVband gap subcell material is substantially lattice matched; that is, ithas a lattice parameter exactly or near exactly that of the underlyingand overlying subcell materials. The subcell containing the 1.0 eVmaterial is as described above, including the window, the emitter, thebase BSF, and the tunnel junctions. U.S. Pat. No. 6,316,715, which isincorporated by reference, discusses the methodology of incorporatingadditional junctions to form more-complex five junction (5J) and sixjunction (6J) devices.

A limitation in the existing 4J, 5J, and 6J devices (and cells with evenmore junctions) is the requirement of nearly perfect lattice matching ofthe inserted subcell and the underlying and overlying materials. Anysubstantial deviation, such as more than about +/−0.1 percentdifference, in lattice parameter without proper design to incorporatethe change in lattice parameter will result in degradation of theoverall efficiency of the solar cell. Another limitation is the relianceon the GaInAsN alloy lattice-matched to the GaAs or Ge layers. Thelattice-matched GaInAsN material has poor quality when produced byavailable techniques. The problem results from the need to incorporate alarge amount of nitrogen to achieve the 1.0 eV band gap and thelattice-matched condition simultaneously.

The present invention provides an improved solar (photovoltaic) cellthat is most preferably utilized as a multijunction structure. The solarcell offers increased efficiency and performance, with little change incost, as compared with conventional solar cells.

In accordance with the invention, a solar cell comprises a first layerhaving a first-layer lattice parameter, a second layer having asecond-layer lattice parameter different from the first-layer latticeparameter, wherein the second layer includes a photoactive second-layermaterial, and a third layer having a third-layer lattice parameterdifferent from the second-layer lattice parameter, wherein the thirdlayer includes a photoactive third-layer material. The first layer maybe photoactive or inert to serve only as a substrate. As with allphotoactive layers, the second layer typically comprises a plurality ofsecond-layer sublayers, wherein each of the second-layer sublayers hassubstantially the second-layer lattice parameter.

The lattice mismatches between the layers is accommodated by a gradedfirst buffer layer extending between and contacting the first layer andthe second layer and having a first-buffer-layer lattice parameter thatincreases (or decreases) with increasing distance from the first layertoward the second layer, and a transparent graded second buffer layerextending between and contacting the second layer and the third layerand having a second-buffer-layer lattice parameter that decreases (orincreases) with increasing distance from the second layer toward thethird layer. The second buffer layer may be of a different compositionthan the first buffer layer. The grading of the lattice parameters ofthe buffer layers is accomplished by grading the composition of thebuffer layers, as the lattice parameter varies with the composition. Asused herein, “transparent” means that the buffer layer transmits lightthat passes through the photoactive layers above it. “Above” refers tohigh-indicated layers: the second layer is “above” the first layer.Stated alternatively, “transparent” means that the buffer layertransmits light that passes through higher-indicated photoactive layers.

The lattice parameters of the buffer layers are preferably selected toachieve lattice matching and an epitaxial relation with the layers thatthey contact at their extremities. For example, the first buffer layeris preferably epitaxial to the first (optionally photoactive) layer onone side, graded in composition through its thickness, and epitaxial tothe second (photoactive) layer on the other side. Similarly, the secondbuffer layer is preferably epitaxial to the second (photoactive) layeron one side, graded in composition through its thickness, and epitaxialto the third (photoactive) layer on the other side. As used herein,“epitaxial” mean that the lattice planes are continuous across theinterface between the photoactive layer and the buffer layer, or betweentwo photoactive layers. Additionally, the first buffer layer may belattice matched to the first (optionally photoactive) layer on one side,graded in composition through its thickness, and lattice matched to thesecond (photoactive) layer on the other side. Similarly, the secondbuffer layer may be lattice matched to the second (photoactive) layer onone side, graded in composition through its thickness, and latticematched to the third (photoactive) layer on the other side.

The use of the graded buffer layer achieves the desired lattice matchingand epitaxial relationship through the thickness of the solar cell. Thislattice matching and epitaxial relationship is needed to minimizeinternal stresses and strains, and for good electron movement throughthe thickness of the solar cell. The graded buffer layer also allows therequirement for lattice matching of the photoactive layers to berelaxed, so that their compositions may be chosen to produce the optimalbandgaps for photoconversion of the incident portions of the solarspectrum. The result is improved performance of the individual subcells,and improved performance of the solar cell.

In one form where the first-buffer-layer lattice parameter increaseswith increasing distance from the first layer toward the second layer,and the second-buffer-layer lattice parameter decreases with increasingdistance toward the third layer, the first layer is a nonphotoactive Gesubstrate, the second layer includes Ga_(1-X)In_(X)As, wherein X is from0 to 0.53, the third layer includes GaAs, the first buffer layerincludes graded GaInAs, and the second buffer layer includes transparentgraded AlGaInAs. More preferably, X is from about 0.12 to about 0.37. Inanother form where the first-buffer-layer lattice parameter decreaseswith increasing distance from the first layer toward the second layer,and the second-buffer-layer lattice parameter increases with increasingdistance toward the third layer, the first layer is a nonphotoactive Gesubstrate, the second layer includes SiGe, the third layer includesGaAs, the first buffer layer includes graded SiGe, and the second bufferlayer includes transparent graded GaInP(As).

The present approach may be extended to additional junctions andsubcells lying above the second and third layers. For example, there maybe a fourth layer comprising a photoactive fourth-layer material. If thefourth layer is naturally lattice matched and epitaxial to the thirdlayer, there is no need for a buffer layer between the third layer andthe fourth layer. If the fourth layer is naturally lattice mismatchedrelative to the third layer, the cell is grown with a transparent gradedthird buffer layer extending between and contacting the third layer andthe fourth layer and having a third-buffer-layer lattice parameter thatmatches that of the third layer where the third buffer layer contactsthe third layer and matches that of the fourth layer where the thirdbuffer layer contacts the fourth layer. Similarly, there may be a fifthlayer comprising a photoactive fifth-layer material. If the fifth layeris naturally lattice matched and epitaxial to the fourth layer, there isno need for a buffer layer between the fourth layer and the fifth layer.If the fifth layer is naturally lattice mismatched relative to thefourth layer, the cell is grown with a transparent graded fourth bufferlayer extending between and contacting the fourth layer and the fifthlayer and having a fourth-buffer-layer lattice parameter that matchesthat of the fourth layer where the fourth buffer layer contacts thefourth layer and matches that of the fifth layer where the fourth bufferlayer contacts the fifth layer. Additional photoactive layers may beadded overlying the fifth layer using these same principles.

More generally, a solar cell comprises a first layer having afirst-layer lattice parameter, and a second layer having a second-layerlattice parameter different from the first-layer lattice parameter. Thesecond layer includes a photoactive second-layer material, while thefirst layer may be photoactive or may be a non-photoactive substrate. Atransparent buffer layer extends between and contacts the first layerand the second layer and has a buffer-layer lattice parameter thatincreases or decreases as needed with increasing distance from the firstlayer toward the second layer. The first layer may transparent towavelengths of light that are photoconverted by the second layer, sothat the second layer and the buffer layer may be positioned furtherfrom the sun or other source of illumination than the first layer whenthe solar cell is in service. Conversely, the second layer and thebuffer layer may be positioned closer to the sun than the first layerwhen the solar cell is in service, and in that case the first layer neednot be transparent. There may be at least one additional photoactivelayer made of a photoactive additional-layer material, either on thesame side of the first layer as the second layer so that the first layeris not between the at least one additional photoactive layer and thesecond layer, or on the opposite side of the first layer from the secondlayer so that the first layer is between the at least one additionalphotoactive layer and the second layer. The buffer layer may be made ofa buffer-layer material having a minimum bandgap greater than a bandgapof the second layer by at least 50 milli-eV. Other compatible featuresdiscussed herein may be used in this embodiment as well, such as thepresence of additional photo active layers.

The present approach achieves lattice matching of the photoactive andbuffer layers throughout the stack of layers that defines the solarcell. The compositions of the photoactive layers, and thence theirlattice parameters, and are selected according to the bandgaprequirements for optimal photoconversion efficiency. The latticematching is achieved using the composition-graded (and thencelattice-parameter-graded) buffer layers. The compositions of the bufferlayers are selected to achieve lattice matching to the adjacent pair ofnon-buffer layers, including the photoactive layers and also anynon-photoactive substrate that may be present.

Other features and advantages of the present invention will be apparentfrom the following more detailed description of the preferredembodiment, taken in conjunction with the accompanying drawings, whichillustrate, by way of example, the principles of the invention. Thescope of the invention is not, however, limited to this preferredembodiment.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic elevational view of a first embodiment of a solarcell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 2 is a schematic elevational view of a second embodiment of a solarcell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 3 is a schematic elevational view of a third embodiment of a solarcell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 4 is a schematic elevational view of a fourth embodiment of a solarcell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 5 is a schematic elevational view of a fifth embodiment of a solarcell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 6 is a schematic elevational view of a sixth embodiment of a solarcell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 7 is a schematic elevational view of a seventh embodiment of asolar cell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 8 is a schematic elevational view of an eighth embodiment of asolar cell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 9 is a schematic elevational view of a ninth embodiment of a solarcell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 10 is a schematic elevational view of a tenth embodiment of a solarcell, with an associated graph indicating lattice parameter as afunction of distance through the solar cell;

FIG. 11 is a schematic elevational view of an eleventh embodiment of asolar cell;

FIG. 12 is a schematic elevational view of a twelfth embodiment of asolar cell; and

FIG. 13 is a schematic elevational view of a thirteenth embodiment of asolar cell.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 1-10 depict multijunction solar cells that incorporate the presentapproach. In each of these multijunction solar cells, sunlight from thesun is incident in a direction 18, and there are electrodes (not shown)to conduct the electrical current generated by the solar cell. When usedto compare two layers, “upper” or “above” or “overlying” refers to alayer closer to the sun, and “lower” or “below” or “underlying” refersto a layer further from the sun or other source of illumination.

FIG. 1 depicts a first embodiment of a multijunction solar cell 20. Themultijunction solar cell 20 includes a first layer 22 having afirst-layer lattice parameter. The first layer 22 may be an inertsubstrate, or it may be a photoactive layer made of a photoactivefirst-layer material. The multijunction solar cell 20 further includes asecond layer 24 having a second-layer lattice parameter different fromthe first-layer lattice parameter. The second layer 24 includes aphotoactive second-layer material. The multijunction solar cell 20further includes a third layer 26 having a third-layer lattice parameterdifferent from the second-layer lattice parameter. The third layerincludes a photoactive third-layer material.

The photoactive layers, such as the layers 24 and 26, and optionally thelayer 22 when including a photoactive material, are each solar subcells.The photoactive material of each of the photoactive layers is selectedto have a bandgap and functionality to optimally convert a portion ofthe solar spectrum to an electrical current. Although it is the commonpractice, followed here, to describe each of these photoactive layers asa “layer”, in actuality each of the photoactive layers includes multiplesublayers. A general photoactive layer includes a BSF sublayer, anoverlying and contacting base sublayer, an overlying and contactingemitter sublayer, and an overlying and contacting window sublayer. Thesesublayers are obtained by properly doping a base-layer material withsmall amounts of the proper dopants, or may be obtained by the use ofother alloy materials doped with small amounts of the proper dopants asdescribed in U.S. Pat. Nos. 6,255,580 and 5,223,043, which areincorporated by reference. The lattice parameter of each of thesublayers is therefore substantially the same, and equal to the latticeparameter of the photoactive layer. There is also a tunnel junctionsublayer (not shown) between adjacent photoactive layers. This type ofdetailed structure of the photoactive layers is described in U.S. Pat.No. 6,660,928, which is incorporated by reference. This detailedstructure of the photoactive layers and tunnel junctions is not shown inthe figures, to avoid clutter and obscuring the nature of the presentinvention.

Returning to the discussion of FIG. 1, the multijunction solar cell 20further includes a transparent graded buffer layer 40 extending betweenand contacting the photoactive second layer 24 and the photoactive thirdlayer 26. The composition of the graded buffer layer 40 varies such thatthe graded buffer layer 40 has a buffer-layer lattice parameter thatvaries, and in this case increases, with increasing distance from thesecond layer 24 toward the third layer 26. Preferably, the compositionof the graded buffer layer 40 is selected so that the lattice of thegraded buffer layer 40 is matched to (i.e., has substantially the samevalue as) and epitaxially related to the second layer 24 where thegraded buffer layer 40 contacts the second layer 24; and composition ofthe graded buffer layer 40 is selected so that the lattice of the gradedbuffer layer 40 is matched to (i.e., has substantially the same valueas) and epitaxially related to the third layer 26 where the gradedbuffer layer 40 contacts the third layer 26. This lattice matching andepitaxial relation between the graded buffer layer 40 and the layers 24and 26 on either side of it achieves minimal strain and stress in theneighborhood of the interfaces, and good electron movement between thelayers 24, 40, and 26.

To achieve the desired transparency, the graded buffer layer 40 ispreferably made of a buffer-layer material having a minimum bandgapgreater than a bandgap (or bandgaps) of the layer (or layers) underlyingit, here the second layer 24, by at least 50 milli-eV.

The multijunction solar cell 20 of FIG. 2 is like that of FIG. 1, exceptas discussed next, and the discussion of FIG. 1 is incorporated here. Inthe embodiment of FIG. 2, the lattice parameter of the graded bufferlayer 40 decreases with increasing distance from the second layer 24toward the third layer 26, because the lattice parameter of the thirdlayer 26 is less than that of the second layer 24. In the embodiment ofFIG. 1, on the other hand, the lattice parameter of the graded bufferlayer 40 increases with increasing distance from the second layer 24toward the third layer 26, because the lattice parameter of the thirdlayer 26 is greater than that of the second layer 24. Another differenceis that the lattice parameter of the graded buffer layer 40 is depictedin FIG. 1 as smoothly varying, whereas the lattice parameter of thegraded buffer layer 40 is depicted in FIG. 2 as varying smoothly oversome of the distance between the layers 24 and 26, and also including astepwise variation. Both smooth and stepwise variations are operable ineither embodiment. There may also be some portions of the graded bufferlayer 40 where there is no variation of the lattice parameter withdistance, although over the entire thickness of the graded buffer layerthere may be a net change in the lattice parameter.

The embodiments of FIGS. 1 and 2 illustrate the lattice parameter of thefirst layer 22 and the second layer 24 as being the same and thereforelattice matched. In many situations of interest, however, the latticeparameter of the first layer 22 and the second layer 24 may bedifferent. In that event, a graded buffer layer, termed the first gradedbuffer layer 42, is placed between the first layer 22 and the secondlayer 24. The graded buffer layer 40 between the second layer 24 and thethird layer 26 is renamed as the second graded buffer layer 44 in thisembodiment. The prior description of the graded buffer layer 40 and itsstructure is incorporated here as to both of the graded buffer layers 42and 44.

In the embodiment of FIG. 3, the lattice parameter of the first gradedbuffer layer 42 increases with increasing distance from the first layer22 toward the second layer 24, and the lattice parameter of the secondgraded buffer layer 44 decreases with increasing distance from thesecond layer 24 toward the third layer 26. In the embodiment of FIG. 4,on the other hand, the lattice parameter of the first graded bufferlayer 42 decreases with increasing distance from the first layer 22toward the second layer 24, and the lattice parameter of the secondgraded buffer layer 44 increases with increasing distance from thesecond layer 24 toward the third layer 26. The increases and decreasesmay be smooth or stepwise, as discussed above. The graded buffer layers42 and 44 are preferably selected to achieve the lattice matching andepitaxy discussed earlier. Additionally, it is preferred that thelattice parameter of one of the graded buffer layers 42, 44 have a netincrease, while the lattice parameter of the other of the graded bufferlayers 44, 42 have a net decrease. This balancing of the increase anddecrease in the lattice parameters reduces longer-distance strain andstress patterns that would otherwise be present in the multijunctionsolar cell 20.

In an example of the multijunction solar cell 20 of FIG. 3, the firstlayer 22 is a nonphotoactive Ge substrate, the second layer 24 includesGa_(1-X)In_(X)As, wherein X is from 0 to 0.53, the third layer 26includes GaAs, the first buffer layer 42 includes graded GaInAs, and thesecond buffer layer 44 includes transparent graded AlGaInAs.

In an example of the multijunction solar cell 20 of FIG. 4, the firstlayer 22 is a nonphotoactive Ge substrate, the second layer 24 includesSiGe, the third layer 26 includes GaAs, the first buffer layer 42includes graded SiGe, and the second buffer layer 44 includestransparent graded GaInP(As).

The multijunction solar cell may further include at least one additionalphotoactive layer made of a photoactive additional-layer material. FIGS.5-7 depict embodiments having one additional photoactive layer, which isa fourth layer 46 having a composition different from that of the thirdlayer 26. In each of these embodiments of FIGS. 5-7, the fourth layer 46is deposited overlying any one of the solar cells 20 of FIGS. 1-4, toform a new multijunction solar cell 48. In the embodiment of FIG. 5, thefourth layer 46 is naturally lattice-matched to the third layer 26 thatis at the top of the solar cell 20. In the embodiment of FIG. 6, thelattice parameter of the fourth layer 46 is greater than that of thethird layer 26 that is at the top of the solar cell 20. In this case, athird graded buffer layer 50 extends between and contacts the thirdlayer 26 and the fourth layer 46 and has a second-buffer-layer latticeparameter that increases with increasing distance from the third layer26 toward the fourth layer 46. In the embodiment of FIG. 7, the latticeparameter of the fourth layer 46 is less than that of the third layer 26that is at the top of the solar cell 20. In this case, the third gradedbuffer layer 50 extends between and contacts the third layer 26 and thefourth layer 46 and has a second-buffer-layer lattice parameter thatdecreases with increasing distance from the third layer 26 toward thefourth layer 46. The increases and decreases in the lattice parameter ofthe third graded buffer layer 50 may be continuous or stepwise, asdiscussed earlier. The discussion of the structures of the buffer layers40, 42, and 44 is incorporated here as to the third buffer layer 50.

In an example of the multijunction solar cell 48 of FIG. 5, the firstlayer 22 is a nonphotoactive Ge substrate, the second layer 24 includesGa_(1-X)In_(X)As, wherein X is from 0 to 0.53, the third layer 26includes GaAs, the fourth layer 46 includes lattice-matched GaInP (sothat there is no need for a third buffer layer), the first buffer layer42 includes graded GaInAs, and the second buffer layer 44 includestransparent graded AlGaInAs.

FIGS. 8-10 depict embodiments having another additional photoactivelayer, which is a fifth layer 52 having a composition different fromthat of the fourth layer 26. In each of these embodiments of FIGS. 8-10,the fifth layer 52 is deposited overlying any one of the solar cells 48of FIGS. 5-7, to form a new multijunction solar cell 54. In theembodiment of FIG. 8, the fifth layer 52 is naturally lattice-matched tothe fourth layer 46 that is at the top of the solar cell 48. In theembodiment of FIG. 9, the lattice parameter of the fifth layer 52 isgreater than that of the fourth layer 46 that is at the top of the solarcell 48. In this case, a fourth graded buffer layer 56 extends betweenand contacts the fourth layer 46 and the fifth layer 52 and has afourth-buffer-layer lattice parameter that increases with increasingdistance from the fourth layer 46 toward the fifth layer 52. In theembodiment of FIG. 10, the lattice parameter of the fifth layer 52 isless than that of the fourth layer 46 that is at the top of the solarcell 48. In this case, the fourth graded buffer layer 56 extends betweenand contacts the fourth layer 46 and the fifth layer 52 and has athird-buffer-layer lattice parameter that decreases with increasingdistance from the fourth layer 46 toward the fifth layer 52. Theincreases and decreases in the lattice parameter of the fourth gradedbuffer layer 56 may be continuous or stepwise, as discussed earlier. Thediscussion of the structures of the buffer layers 40, 42, 44, and 46 isincorporated here as to the fourth buffer layer 56.

FIGS. 11-13 illustrate a solar cell 60 having a first layer 62 with afirst-layer lattice parameter. The first layer 62 may be a photoactivelayer or a non-photoactive substrate. A second layer 64 has asecond-layer lattice parameter different from the first-layer latticeparameter. The second layer 64 is photoactive and includes a photoactivesecond-layer material. A buffer layer 66 extends between and contactsthe first layer 62 and the second layer 64. The buffer layer 66 has abuffer-layer lattice parameter that increases with increasing distancefrom the first layer 62 toward the second layer 64 in the event that thelattice parameter of the second layer 64 is greater than that of thefirst layer 62, and decreases with increasing distance from the firstlayer 62 toward the second layer 64 in the event that the latticeparameter of the second layer 64 is less than that of the first layer62. Compatible features operable with other embodiments are operablewith the embodiments of FIGS. 11-13, and the pertinent discussion isincorporated here.

In the embodiment of FIG. 11, the first layer 62 is closer to the sun orother light source, and thence to the incident sunlight 18, than is thesecond layer 64, when the solar cell 60 is in service. Consequently, thefirst layer 62 must be transparent to wavelengths of light that arephotoconverted by the second layer 64, whether the first layer 62 isphotoactive or not photoactive. In the embodiment of FIG. 12, the firstlayer 62 is further from the sun or other light source, and thence fromthe incident sunlight 18, than is the second layer 64, when the solarcell 60 is in service. Consequently, the first layer 62 may be, but neednot be, transparent to wavelengths of light that are photoconverted bythe second layer 64, whether the first layer 62 is photoactive or notphotoactive. Additional solar subcells 68 and 70 may optionally bedeposited overlying the second layer 64.

The embodiment of FIG. 13 is based upon that of FIG. 11 with the firstlayer 62 being a non-photoactive substrate. The embodiment of FIG. 13further has the additional solar subcell 68, and the additional optionalsolar subcell 70. In this case, the solar subcell defined by the secondlayer 64 and its associated buffer layer 66 are on the opposite side ofthe first-layer substrate 62 from additional solar subcells 68 and 70.That is, the additional solar subcells 68 and 70 are on the side of thefirst-layer substrate 62 closest to the sun, and the second-layersubcell 64 and buffer layer 66 are on the side of the first-layersubstrate 62 furthest from the sun. A reason for using this architectureis that it may in some cases be difficult to deposit the buffer layer 66or to deposit subcells 68 and/or 70 in the presence of the buffer layer66. The placement of the second layer 64 and the buffer layer 66 on theopposite side of the substrate from the subcells 68 and 70 isolates thesubcells 68 and 70 from the second layer 64 and the buffer layer 66. Inpractice, the buffer layer 66 and the second layer 64 are deposited onone side of the first-layer substrate 62, and then this structure isinverted in the deposition apparatus to deposit the subcell 68 and thesubcell 70 (where present), as well as any additional subcells overlyingthe subcell 70. The subcells 68 and 70 may be lattice matched andepitaxial, so that no graded buffer layer is needed between them, orthere may be a graded buffer layer between them as described in relationto other embodiments.

An example of the solar cell 60 of FIG. 13 includes a transparent GaAssubstrate 62 as the first layer 62, a GaInAs second layer 64 havingabout 35 percent indium, and an AlGaInAs or GaInP(As) graded bufferlayer 66 on the side of the first-layer substrate 62 remote from theincident sunlight 18. A GaAs additional solar subcell 68 and a GaInPadditional solar subcell 70 are on the side of the first-layer substrate62 closest to the sun. The GaAs additional solar subcell 68 and theGaInP additional solar subcell 70 are substantially lattice matched andepitaxial, so that no graded buffer layer is needed between the solarsubcells 68 and 70.

Although a particular embodiment of the invention has been described indetail for purposes of illustration, various modifications andenhancements may be made without departing from the spirit and scope ofthe invention. Accordingly, the invention is not to be limited except asby the appended claims.

1-33. (canceled)
 34. A solar cell comprising: a first layer having afirst-layer lattice parameter; a second layer having a second-layerlattice parameter different from the first-layer lattice parameter,wherein the second layer includes a photoactive second-layer material;and a buffer layer extending between and contacting the first layer andthe second layer and having a buffer-layer lattice parameter thatincreases with increasing distance from the first layer toward thesecond layer.
 35. The solar cell of claim 34, wherein the first layer istransparent to wavelengths of light that are photoconverted by thesecond layer.
 36. The solar cell of claim 34, wherein the first layer isa substrate that is not photoactive.
 37. The solar cell of claim 34,wherein the solar cell comprises at least one additional photoactivelayer made of a photoactive additional-layer material.
 38. The solarcell of claim 37, wherein the first layer is between the at least oneadditional photoactive layer and the second layer.
 39. The solar cell ofclaim 37, wherein the first layer is not between the at least oneadditional photoactive layer and the second layer.
 40. The solar cell ofclaim 34, wherein the buffer layer is made of a buffer-layer materialhaving a minimum bandgap greater than a bandgap of the second layer byat least 50 milli-eV.
 41. A solar cell comprising: a first layer havinga first-layer lattice parameter; a second layer having a second-layerlattice parameter different from the first-layer lattice parameter,wherein the second layer includes a photoactive second-layer material;and a graded buffer layer extending between and contacting the firstlayer and the second layer and having a buffer-layer lattice parameterthat decreases with increasing distance from the first layer toward thesecond layer.
 42. The solar cell of claim 41, wherein the first layer istransparent to wavelengths of light that are photoconverted by thesecond layer.
 43. The solar cell of claim 41, wherein the first layer isa substrate that is not photoactive.
 44. The solar cell of claim 41,wherein the solar cell comprises at least one additional photoactivelayer made of a photoactive additional-layer material.
 45. The solarcell of claim 44, wherein the first layer is between the at least oneadditional photoactive layer and the second layer.
 46. The solar cell ofclaim 44, wherein the first layer is not between the at least oneadditional photoactive layer and the second layer.
 47. The solar cell ofclaim 41, wherein the buffer layer is made of a buffer-layer materialhaving a minimum bandgap greater than a bandgap of the second layer byat least 50 milli-eV.
 48. The solar cell of claim 41, wherein: the firstlayer is transparent GaAs, the second layer is GaInAs having about 35percent indium, the graded buffer layer is AlGaInAs or GaInP(As), andwherein the solar cell further includes a GaAs additional solar subcellcontacting the first layer on the opposite side from the second layersuch that the first layer is between the GaAs additional solar subcelland the second layer, and a GaInP additional solar subcell contactingthe GaAs additional solar subcell.